electron tunneling meaning in Chinese
电子穿隧
电子贯穿
电子隧道效应
Examples
- Hot electron tunneling mechanism of current collapse in gan hfet
沟道热电子隧穿电流崩塌模型 - In this paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated
摘要研究了电子隧穿通过量子点的相干输运特性。 - It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。 - It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。 - The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。